Temperature dependent density of states effective mass in nonparabolic p-type silicon

Abstract
Previously, an exact calculation was made for the temperature dependent density of states effective mass in p‐type silicon. This calculation was made for the nondegenerate regime and included the full nonspherical‐nonparabolic nature of the valence band structure. For those researchers interested in using this mass for the analysis of their transport data we offer a polynomial fitted expression. The values generated are within 1% of the theoretical values.

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