A new process for thinned, back-illuminated CCD imager devices
- 7 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 88 2, 98-101
- https://doi.org/10.1109/vtsa.1989.68591
Abstract
A manufacturable process for converting a front-illuminated CCD imager to its back-illuminated counterpart is described. Low-light-level imaging is enhanced, especially in the blue and deep-ultraviolet region. Quantum efficiency is significantly improved by forming a shallow p/sup +/ accumulation layer on the back surface using a laser-induced activation of very-low-energy boron implantation. The fabrication process has been applied to 64-*128-, 420-*420-, and 420-*840-pixel imagers. An example of imaging obtained with the 420-*420-pixel imager is shown and discussed. Experimental results showing the enhanced response of the 64-*128-pixel imager are presented.Keywords
This publication has 6 references indexed in Scilit:
- Ultraviolet And Extreme Ultraviolet Response Of Charge-Coupled-Device DetectorsOptical Engineering, 1987
- Large Format, High Resolution Image SensorsOptical Engineering, 1987
- Laser-induced melting of predeposited impurity doping technique used to fabricate shallow junctionsJournal of Applied Physics, 1987
- Quantum efficiency model for the CCD flash gatePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- High Performance Charge-Coupled-Device (CCD) Imagers Tailored For Scientific ApplicationsPublished by SPIE-Intl Soc Optical Eng ,1985
- Characteristics of thinned backside-illuminated charge-coupled device imagersApplied Physics Letters, 1974