Oxygen impurity in silicon single crystals
- 1 July 1958
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 6 (1) , 46-50
- https://doi.org/10.1016/0022-3697(58)90216-6
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
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- Infrared Absorption and Oxygen Content in Silicon and GermaniumPhysical Review B, 1956
- Precision Determination of Lattice Constants with a Geiger-Counter X-Ray DiffractometerPhysical Review B, 1955
- Precision Density Determination of Large Single Crystals by Hydrostatic WeighingPhysical Review B, 1955
- Resistivity changes in silicon single crystals induced by heat treatmentActa Metallurgica, 1955
- Infrared Lattice Absorption in Ionic and Homopolar CrystalsPhysical Review B, 1955
- Infrared Lattice Absorption Bands in Germanium, Silicon, and DiamondPhysical Review B, 1954
- Preparation, Structure, and Applications of Thin Films of Silicon Monoxide and Titanium DioxideJournal of the American Ceramic Society, 1950