Improved MODFET performance through ion implantation in the gate region
- 1 December 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 8 (12) , 563-565
- https://doi.org/10.1109/edl.1987.26729
Abstract
AlxGa1-xAs/GaAs modulation-doped FET's (MODFET's) are reported which utilize for the first time a shallow low-dose p-type implantation under the gate region to improve the source-drain breakdown voltage, and the gate-channel forward turn-on and reverse breakdown voltages. Extremely low output conductances of less than 0.2 mS/mm are also obtained and the open-circuit dc voltage gains gm/gdexceed 250. Such improvements are important for achieving high RF power in microwave device applications, and have similarly significant implications for digital circuitry.Keywords
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