AlGaN/GaN HBTs using regrown emitter
- 16 September 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (19) , 1671-1673
- https://doi.org/10.1049/el:19991129
Abstract
AlGaN/GaN HBTs have been realised using the regrown emitter method. The device structure consists of an n-GaN collector, p-GaN base, and selectively grown AlGaN emitter. The HBTs were grown using metal organic chemical vapour deposition on sapphire substrate. The emitter was grown selectively on a pn junction diode after it was patterned with SiN. A common emitter curve showing low-leakage has been obtained.Keywords
This publication has 2 references indexed in Scilit:
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