OPTICAL PROPERTIES OF CdIn2S4 SINGLE CRYSTALS

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Abstract
The optical absorption of CdIn2S4 single crystals has been measured at several temperatures in the spectral range from 0.4 to 0.8 µ. The interband gap for the indirect allowed transition was found to have a temperature coefficient of - 9.5 x 10-4 eV/deg between 100 K and 300 K and to have a value of 2.7 eV when extrapolated to 0 K. From a temperature dependence of the photocurrent corresponding to the knee on the photocurrent-temperature curve, the energy level of the recombination centers (sensitizing centers) was found to be about 0.7 eV above the valence band edge. It was found from measurement of thermally stimulated current that there were three kinds of temporary trap levels for the electrons at about 0.1, 0.2 and 0.5 eV below the conduction band. In a study of the current-voltage characteristics, low frequency (0.05 Hz-10 Hz) oscillations of the photocurrent were observed. Two types of the oscillations were observed i. e., sinusoidal type and pulse type. The frequencies of the oscillations increases with an increase of the light intensity and also they do with an increase of the applied voltage. The oscillations are probably directly associated with exhaustion of the traps, recombination and thermal quenching

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