Introduction of high oxygen concentrations into silicon wafers by high-temperature diffusion
- 1 December 1999
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- Vol. 438 (2) , 429-432
- https://doi.org/10.1016/s0168-9002(99)00869-4
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