Deposition Mechanism of Silicon Nitride in Direct Photoassisted Chemical Vapor Deposition Using a Low‐Pressure Hg Lamp

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Abstract
Silicon nitride films applicable to microelectronics are deposited by photoassisted chemical vapor deposition (CVD) with a low‐pressure Hg lamp (185 nm). We describe the deposition mechanism of in the photo‐CVD based on analyses of film structures and transient mass spectroscopy. is decomposed into and H by UV‐light irradiation. is decomposed through the reaction with or H. films are formed through an intermediate species formed in gas phase. The formation of the intermediate species is controlled by the decomposition of . At a substrate temperature of 350°C, the deposition rate is controlled by the amount of the intermediate species with higher mass (amu 77, ), and the films are polymeric solids. At 500°C, chemical species are deposited on the surface before they grow into the intermediate species with the high mass (amu 77), and the film structure becomes stoichiometric .

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