Sputter-induced roughness in thermal SiO2 during Auger sputter profiling studies of the Si–SiO2 interface

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Abstract
We have used transmission electron microscopy replica techniques in conjunction with Auger sputter profiling (ASP) to study the effect of sputtering on the morphology of SiO2 surfaces. 1 keV Ar ions incident 49° from the surface normal induce a ridge and valley structure with the ridges running normal to the ion beam direction. The degree of roughness is proportional to the amount of SiO2 removed by sputtering and appears to have no effect on the width of the Si–SiO2 interface as seen by ASP.

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