Dopant density from maximum-minimum capacitance ratio of implanted MOS structures
- 31 May 1982
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 25 (5) , 375-379
- https://doi.org/10.1016/0038-1101(82)90122-8
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Interpretation of C-V measurements for determining the doping profile in semiconductorsSolid-State Electronics, 1980
- Threshold shifts due to nonuniform doping profiles in surface channel MOSFET'sIEEE Transactions on Electron Devices, 1979
- Depletion approximation analysis of the differential capacitance—Voltage characteristics of an MOS structure with nonuniformly doped semiconductorsIEEE Transactions on Electron Devices, 1979
- A charge-sheet model of the MOSFETSolid-State Electronics, 1978