Field-enhanced conductivity in polyacetylene-construction of a field-effect transistor

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Abstract
The authors have fabricated field-effect transistors (FET) using 'Durham' route polyacetylene as the active semiconductor. The devices are constructed as MIS structures, with silicon dioxide as the insulator layer between the gate and the polyacetylene. The device behaves as a p-channel enhancement (normally off) FET. For the device geometry presented, the channel conductivity may be modulated by a factor of greater than 2000. The carrier channel mobility and the device transconductance have been determined to be 9*10-6 cm2 V-1 s-1 and 2.5 nS respectively.