Behavior of MOS inversion layers at low temperature
- 1 November 1967
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 14 (11) , 787-789
- https://doi.org/10.1109/t-ed.1967.16109
Abstract
Metal-oxide-silicon capacitance voltage curves in the inversion range at liquid nitrogen temperature are interpreted. Buildup of the inversion charge is very slow, but once it is established it cannot be readily injected. A forward bias of about 0.25 volt must be reached across the space-charge region before noticeable injection occurs. The true inversion capacitance voltage curve can be measured by allowing a long time for equilibration at each bias point.Keywords
This publication has 0 references indexed in Scilit: