The Growth and Electrical Characteristics of Epitaxial Layers of Zinc Selenide on p‐Type Germanium

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Abstract
The experimental details are given of an evaporation technique for producing epitaxial layers of zinc selenide on 0.1 Ωcm p‐type germanium substrates. The degree of crystal order in the deposited layer is presented and the results show that, whilst the (100) orientation readily produces epitaxial layers of zinc selenide, the (110) and (111) orientations are more restricted. The preliminary electrical characteristics of the devices formed on the (100) substrate indicate that, at the higher growth temperatures, an interface layer is formed between the germanium and zinc selenide.

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