Improvement of Solar Cell Performance Using Plasma-Deposited Silicon Nitride Films with Variable Refractive Indices

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Abstract
Silicon nitride films containing various amounts of Si or O atoms were prepared by controlling the operation parameters of the plasma-chemical vapor deposition in N2-diluted silane mixed with H2-diluted silane or with O2 under various mixing ratios. By this method, the refractive indices of silicon nitride films could be varied over a wide range. The refractive index of films containing oxygen atoms gradually changed through oxygenation; however, oxygen-free plasma-deposited silicon nitride (P-SiN) films containing various amounts of Si atoms were very stable. The spectral response of the reflectance was measured for the latter Si-rich P-SiN films in order to determine the appropriate conditions as antireflective coatings for P/N single crystal Si solar cells. As a result, Si-rich P-SiN antireflective films improved the conversion efficiency of Si solar cells by 40 to 50 or by 50 to 70%, depending on whether a single-layer or double-layer coating, respectively, was used.

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