Numerical simulation of nonstationary electron transport in Gunn devices in a harmonic mode oscillator circuit
- 1 September 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 34 (9) , 1983-1994
- https://doi.org/10.1109/T-ED.1987.23185
Abstract
The behavior of GaAs Gunn devices in harmonic mode oscillator circuits is numerically simulated taking nonstationary electron transport into account, The output power and dynamic impedances of the Gunn device are calculated for different passive circuitries. It is shown that for maximum output power the passive circuitry should behave like a series resonant circuit.Keywords
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