InGaAs pin photodiode fabricated on semi-insulating InP substrate for monolithic integration

Publisher Website
Google Scholar
Abstract
A low-dark-current high-speed InGaAs PIN photodiode suitable for optoelectronic monolithic integration has been fabricated by LPE method on semi-insulating InP substrate. The photodiode has the lowest reported dark-current density of 2.5 × 10−6 A/cm2 at −10 V in this material system. At the operating voltage of −5 V, an external quantum efficiency of >90% at 1.3 μm and >83% at 1.55 μm, a rise time of <35 ps and an FWHM of <45 ps have been measured.