Simulation and measurement of density variation in Mo films sputter deposited over oxide steps
- 1 May 1990
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 8 (3) , 1593-1596
- https://doi.org/10.1116/1.576771
Abstract
A density profile for sputtered metal deposited over a step is generated using simulation by ballistic deposition (simbad), a two-dimensional computer simulation of thin film growth by ballistic deposition of hard disks. By postdeposition etching of a real Mo film deposited over a similar step, regions with high etch rate are identified. As etch rate is related to density, these are assumed to be low density sections, and are in fact found to agree well with low density regions predicted by the simulations.Keywords
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