Optoelectronic integrated four-channel transmitter array incorporating AlGaAs/GaAs quantum-well lasers

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Abstract
A four-channel optoelectronic integrated transmitter array which is fabricated on a single GaAs substrate and operates at 834 nm is described. Each of the circuits incorporates a laser, a photodiode for laser power monitoring, and a laser driver circuit consisting of three GaAs field-effect transistors and a resistor. Laser threshold current of 15-21 mA, transmitter conversion efficiency of approximately 6 mW/V and high-speed operation at a bit rate of more than 1.5-Gb/s NRZ with allowable crosstalk have been demonstrated. A preliminary aging test of the lasers indicated that their stability is comparable to that of discrete devices. The results have demonstrated the feasibility of applying the transmitter array to optical components that process multichannel optical signals at high speed.