Electronic defects in silicon induced by MeV carbon and oxygen implantations
- 1 February 1989
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 37-38, 970-974
- https://doi.org/10.1016/0168-583x(89)90336-4
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Proximity gettering with mega-electron-volt carbon and oxygen implantationsApplied Physics Letters, 1988
- Minority-carrier lifetime analysis of silicon epitaxy and bulk crystals with nonuniformly distributed defectsIEEE Transactions on Electron Devices, 1988
- MeV-energy B+, P+ and As+ ion implantation into SiNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Damage induced through megavolt arsenic implantation into siliconApplied Physics Letters, 1982