Depletion-type m.o.s.f.e.t.s for low-temperature operation
- 8 November 1979
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 15 (23) , 759-760
- https://doi.org/10.1049/el:19790542
Abstract
Taking carrier freeze-out into account|a novel structure for depletion-type m.o.s.f.e.t.s suitable for low-temperature operation is proposed. Its channel consists of two regions; a relatively wide, low-impurity-density region and a relatively narrow, high-impurity-density region. It is estimated that the proposed structure has more square-law-like load character istics and higher current density than conventional ones.Keywords
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