Breakdown and hysteresis in forward biased P-N GaAs luminescent junctions

• 1 January 1964
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
• Vol. 52  (2) , 191-192
• https://doi.org/10.1109/PROC.1964.2815

Abstract

Keywords

• ELECTRIC BREAKDOWN
• HYSTERESIS
• GALLIUM ARSENIDE
• P-N JUNCTIONS
• DIODES
• SEA SURFACE
• BREAKDOWN VOLTAGE
• SURFACE WAVES
• EARTH
• ATMOSPHERE