Record RF performance of standard 90 nm CMOS technology
- 25 April 2005
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
We have optimized 3 key RF devices realized in standard logic 90 nm CMOS technology and report a record performance in terms of n-MOS maximum oscillation frequency f/sub max/ (280 GHz), varactor tuning range and varactor and inductor quality factorKeywords
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