Abstract
Experimental researches of localization in weak and strong magnetic fields in semiconductor two-dimensional systems are reviewed based mainly on the works performed by the Gakushuin group. Our 2D systems are mostly inversion layers in Si-MOSFETs and GaAs/AlxGa1-xAs heterojunction interfaces. The main topics are anomalous mangnetoresistance in weak magnetic fields, localization in Landau levels which causes the integral quantum Hall effect and thermal activation of conduction in the fractional quantum Hall effect.

This publication has 0 references indexed in Scilit: