Evaluation of InGaAsP laser material by optical pumping
- 1 September 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 19 (9) , 1342-1344
- https://doi.org/10.1109/jqe.1983.1072039
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Optically induced catastrophic degradation in InGaAsP/InP layersApplied Physics Letters, 1982
- Optical properties of In1−xGaxP1−yAsy, InP, GaAs, and GaP determined by ellipsometryJournal of Applied Physics, 1982
- Temperature dependence of threshold and electrical characteristics of InGaAsP-InP d.h. lasersElectronics Letters, 1980
- Nonradiative carrier loss and temperature sensitivity of threshold in 1.27 μm (GaIn)(AsP)/InP d.h. lasersElectronics Letters, 1980
- Temperature dependence of InGaAsP double-heterostructure laser characteristicsElectronics Letters, 1979
- Small-area, high-radiance c.w. InGaAsP l.e.d.s emitting at 1.2 to 1.3 μmElectronics Letters, 1977