The influence of thermal relaxation on implantation induced disorder accumulation
- 1 February 1988
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 105 (3-4) , 211-223
- https://doi.org/10.1080/00337578808229948
Abstract
A detailed analysis is made of disorder accumulation under direct ion implantation amorphous zone generation conditions where the zone size can thermally relax both during and after implantation. It is shown that this leads to considerable complexity in the behaviour of the amorphous fractionf as a function of ion fluence Φ, ion flux densityJ and substrate temperatureT. Steady state and low amorphous fraction solutions show how zone expansion or contraction processes can be distinguished.Keywords
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