Observations Of Epitaxial Growth Using Scanning Tunneling Microscopy
- 5 February 1990
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- p. 136-143
- https://doi.org/10.1117/12.963925
Abstract
An ultrahigh vacuum system has been built which allows molecular beam epitaxial deposition of compound semiconductors and scanning tunneling microscopy (STM) imaging, as well as angle-resolved photoemission, X-ray photoemission and Auger electron spectroscopies, and low energy electron diffraction. Samples can be moved from station to station for individual operations. We demonstrate the utility of the system with examples of homoepitaxial GaAs(100) and GaAs(111) surfaces, and heteroepitaxial GaAs/Si(100). We also compare the STM results with complementary measurements from the literature. Finally, we comment on the utility of such systems.Keywords
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