Electrical Conduction in Nonstoichiometric α-Nb2O5

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Abstract
The electrical conductivity of nonstoichiometric α‐Nb2O5—x was measured as a function of both the composition over the range 0.001≤x≤0.137 and the temperature from 77° to 1270°K. The temperature dependence of the conductivity of a specimen of fixed oxygen content may be rationalized on the basis of excitation of electrons from donor centers at low temperatures and an exhaustion region at high temperatures. The conductivity data are interpreted in terms of an oxygen ion vacancy defect capable of trapping two electrons which can be thermally excited into a narrow 4d conduction band. Assuming this type of defect, an estimate of the mobility of the electrons in the conduction band is made from the conductivity data in the exhaustion region.

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