Solid-state growth of Si to produce planar surfaces
- 1 June 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (6) , 2260-2262
- https://doi.org/10.1063/1.323015
Abstract
Paralleling the sophisticated control of Si and GaAs growth from fluid media, we demonstrate control of Si growth using a solid growth medium. Faceted dissolution pits were first produced in a Si substrate using standard photolithographic techniques and Al metallization. Si was then evaporated onto the cold structure, depositing as amorphous material. Upon heating, the amorphous Si migrated through the solid Al and grew rapidly in the faceted pits, typically refilling them flush with the surrounding substrate. Evidence that the rapid growth occurs only while the amorphous Si is dissolving into the Al is presented.This publication has 5 references indexed in Scilit:
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