Carbon-doped AlxGa1−xAs-GaAs quantum well lasers

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Abstract
Data are presented demonstrating that carbon (C) can be used as the active p‐type dopant in high‐quality AlxGa1−xAs‐GaAs quantum well laser crystals. We show, by fabricating three different types of stripe geometry laser diodes (oxide stripe, hydrogenated stripe, and impurity‐induced layer‐disordered stripe), that C is a stable dopant and compatible in behavior with typical integrated‐circuit style of device processing. The data suggest that more complicated laser geometries are possible on C‐doped material because of minimal pattern ‘‘undercutting’’ after processing by, for example, hydrogenation or impurity‐induced layer disordering.