Electroreflectance in GaAs
- 1 January 1966
- journal article
- Published by IOP Publishing in Proceedings of the Physical Society
- Vol. 87 (1) , 239-243
- https://doi.org/10.1088/0370-1328/87/1/326
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Optical Field Effect in SiliconPhysical Review B, 1965
- Franz-Keldysh Effect of the Refractive Index in SemiconductorsPhysical Review B, 1965
- Optical-Field Effect on Thresholds, Saddle-Point Edges, and Saddle-Point ExcitonsPhysical Review Letters, 1965
- Surface measurements on gallium arsenideSurface Science, 1964
- Electronic Spectra of Crystalline Germanium and SiliconPhysical Review B, 1964
- Study of gallium arsenide surfacesJournal of Physics and Chemistry of Solids, 1964
- Absorption Spectrum of Germanium and Zinc-Blende-Type Materials at Energies Higher than the Fundamental Absorption EdgeJournal of Applied Physics, 1963
- Fundamental Reflectivity of GaAs at Low TemperaturePhysical Review Letters, 1962
- Optical Spectrum of the Semiconductor Surface States from Frustrated Total Internal ReflectionsPhysical Review B, 1962
- Dielectric Constant Behavior Near Band Edges in CdTe and GePhysical Review Letters, 1962