Preparation of Highly Oriented Copper Films by Photo-Assisted Chemical Vapor Deposition Using β-Diketonate Complex

1 May 1992

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 31 (5A) , L588-590
https://doi.org/10.1143/jjap.31.l588

Abstract

We have obtained high-quality copper films by photo-assisted chemical vapor deposition using β-diketonate complex as a starting material. The thermal activation energy of the deposition rate with UV-irradiation is smaller than that without UV-irradiation, because of photo-assisted decomposition. Copper films prepared at a substrate temperature of 350°C with UV-irradiation are highly (111)-oriented with an electrical resistivity of 1.7 µΩ·cm, as low as the value of bulk copper. Surface morphology is smooth, because the growing surface has high nuclei density.

Keywords

This publication has 2 references indexed in Scilit:

Plasma-Enhanced Chemical Vapor Deposition of Copper
Japanese Journal of Applied Physics, 1991
Laser chemical vapor deposition of copper
Applied Physics Letters, 1985