Emitter Scaling of Single-Polysilicon SiGe:C HBTs with Highly Doped Base Layers
- 1 January 2000
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
First Page of the Article Author(s) Knoll, D. IHP, Frankfurt (Oder), Germany Heinemann, B. ; Ehwald, K.E. ; Fischer, G.G.Keywords
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