Sputter-Induced Segregation of As in Si During SIMS Depth Profiling
- 1 January 1986
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Secondary ion mass spectrometry: Depth profiling of shallow As implants in silicon and silicon dioxideJournal of Applied Physics, 1984
- Element‐Specific broadening effects in SIMS depth profiling of light impurities implanted in siliconSurface and Interface Analysis, 1982
- Theoretical aspects of atomic mixing by ion beamsNuclear Instruments and Methods, 1981
- Recoil mixing in solids by energetic ion beamsNuclear Instruments and Methods, 1980
- The Diffusion of Ion‐Implanted Arsenic in SiliconJournal of the Electrochemical Society, 1975