Design considerations and operating characteristics of high-power active grating-surface-emitting amplifiers
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 28 (9) , 1884-1893
- https://doi.org/10.1109/3.144480
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- Method for obtaining a collimated near-unity aspect ratio output beam from a DFB-GSE laser with good beam qualityApplied Optics, 1992
- High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiersIEEE Journal of Quantum Electronics, 1991
- High power, diffraction-limited emission from monolithically integrated active grating master oscillator power amplifierElectronics Letters, 1991
- Organometallic vapor phase epitaxy of high-performance strained-layer InGaAs-AlGaAs diode lasersIEEE Journal of Quantum Electronics, 1991
- Length dependence of the saturation characteristics in 1.5- mu m multiple quantum well optical amplifiersIEEE Photonics Technology Letters, 1990
- Coherent operation of monolithically integrated master oscillator amplifiersElectronics Letters, 1990
- Optical carrier linewidth broadening in a traveling wave semiconductor laser amplifierIEEE Journal of Quantum Electronics, 1990
- Low internal loss separate confinement heterostructure InGaAs/InGaAsP quantum well laserApplied Physics Letters, 1987
- Measurement of effective index and dispersion in an index-guided surface-emitting distributed Bragg reflector laserElectronics Letters, 1987
- Computer model of an injection laser amplifierIEEE Journal of Quantum Electronics, 1983