Temperature dependence of the Urbach edge in GaAs
- 1 November 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (9) , 5609-5613
- https://doi.org/10.1063/1.359683
Abstract
The temperature dependence of the optical‐absorption edge (Urbach edge) of GaAs is measured in semi‐insulating and n‐type GaAs (n=2×1018 cm−3) over the temperature range from room temperature to 700 °C. Both the optical absorption and the temperature are measured using a diffuse reflectance technique. The characteristic energy of the exponential absorption edge is found to increase linearly with temperature, from 7.5 meV at room temperature to 12.4 meV at 700 °C, for semi‐insulating GaAs. The temperature dependent part of the width of the Urbach edge for semi‐insulating GaAs is six times smaller than predicted by the standard theory where the edge width is proportional to the phonon population.This publication has 15 references indexed in Scilit:
- Factors affecting the temperature uniformity of semiconductor substrates in molecular-beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Urbach edge of crystalline and amorphous silicon: a personal reviewJournal of Non-Crystalline Solids, 1992
- A new optical temperature measurement technique for semiconductor substrates in molecular beam epitaxyCanadian Journal of Physics, 1991
- Band tails in disordered systemsPhysical Review B, 1986
- Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous SiliconPhysical Review Letters, 1981
- Resolved Free-Exciton Transitions in the Optical-Absorption Spectrum of GaAsPhysical Review B, 1972
- Urbach rulePhysica Status Solidi (a), 1971
- Absorption Edge of Impure Gallium ArsenidePhysical Review B, 1965
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962
- Anomalous Optical Absorption Limit in InSbPhysical Review B, 1954