Application of the f-sum rule to the band edges of several semi-conductors
- 1 January 1971
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 4 (1) , L1-L3
- https://doi.org/10.1088/0022-3719/4/1/016
Abstract
Experimental values of the band edge parameters for the semiconductor sequences (InSb, InAs, InP); (GaSb, GaAs); (CdSe, CdS (hexagonal)) follow the f-sum rule. This result is additional evidence that PbTe, which does not obey the f-sum rule, is anomalous.Keywords
This publication has 2 references indexed in Scilit:
- -Sum Rule Analysis of the Band Edges in PbS, PbSe, and PbTePhysical Review Letters, 1970
- Band Structure and Transport Properties of Some 3–5 CompoundsJournal of Applied Physics, 1961