High precision measurements of the hall effect for silicon mos inversion layers in strong magnetic fields
- 1 January 1982
- journal article
- Published by Elsevier in Surface Science
- Vol. 113 (1-3) , 16-21
- https://doi.org/10.1016/0039-6028(82)90556-8
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Effect of localization on the hall conductivity in the two-dimensional system in strong magnetic fieldsSolid State Communications, 1981
- Quantized Hall resistance and the measurement of the fine-structure constantPhysical Review B, 1981
- Resistance standard using quantization of the Hall resistance of GaAs-AlxGa1−xAs heterostructuresApplied Physics Letters, 1981
- New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall ResistancePhysical Review Letters, 1980
- Theory of Hall Effect in a Two-Dimensional Electron SystemJournal of the Physics Society Japan, 1975