Quantum well bound states of HgTe in CdTe

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Abstract
The electron states of a thin isolated layer of HgTe in CdTe are considered using a many-band k.p Hamiltonian. These states are obtained by a transfer matrix technique and the bound states identified by the associated singularities of this transfer matrix. It is found that the heavy hole states are similar to those of GaAs/GaAlAs quantum wells and that the interfaces introduce strong mixing of heavy and light hole states. However, in the present case, single interfaces support bound states which in the quantum well lead to light particle bound states with large amplitude at the interfaces. The implications for quantum well mobilities and interface stability are pointed out.