Semiconducting graphene nanostrips with edge disorder

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Abstract
Results of calculations are presented which show that edge disorder can easily transform semiconducting graphene nanostrips into Anderson insulators. However, it is also shown that this problem could be overcome by adjusting the nanostrip aspect ratio to decrease the effects of the edge disorder without making the nanostrip so wide as to close the semiconducting band gap or so short as to allow tunneling through the band gap.