RESONANT TUNNELING IN SEMICONDUCTOR HETEROSTRUCTURES

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Abstract
This paper reviews some of the recent advances in resonant tunneling in GaAlAs-GaAs-GaAlAs heterostructures. The emphasis is on new physical mechanisms that enlarge the simple picture of one-dimensional, single-band, tunneling in semiconductors. I discuss the effect of a strong magnetic field and of hydrostatic pressure on resonant tunneling, and then I consider X-state resonant tunneling in addition to tunneling via states derived from a Ɖ-point potential profile. The limitations of our current understanding of these processes are pointed out

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