Generation rate of point defects in silicon irradiated by MeV ions
- 1 June 1993
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 80-81, 583-586
- https://doi.org/10.1016/0168-583x(93)96186-g
Abstract
No abstract availableKeywords
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