Effect of high pressure on the Raman and electronic absorption spectra ofand
- 15 April 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 31 (8) , 5423-5427
- https://doi.org/10.1103/physrevb.31.5423
Abstract
The effect of pressure on the Raman spectrum of scheelite-structure compounds and has been investigated, with use of a diamond-anvil cell. The electronic absorption edge in was also studied up to 100 kbar. Both in and in , new Raman peaks appear at 90 and 45 kbar, respectively, due to first-order phase transition. The electronic absorption edge in decreases in energy at the rate of 5 meV/kbar. These results are discussed in terms of the crystal chemistry and electronic structure of AB (oxide) compounds.
Keywords
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