Characterization of a GaN Bipolar Junction Transistor after Operation at 300 for over 300 h
- 1 August 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (8A) , L851
- https://doi.org/10.1143/jjap.38.l851
Abstract
GaN with an n-p-n structure was grown using gas-source molecular beam epitaxy (GSMBE). We fabricated an n-p-n GaN bipolar junction transistor. The high-temperature reliability of the bipolar junction transistor (BJT) was investigated. That is, the lifetime performance of the BJT at 300°C was examined during continuous current injection at 300°C. We confirmed that the performance of the bipolar transistor at 300°C did not change for over 300 h. No degradation of the metal-semiconductor interface was observed by transmission electron microscopy (TEM). The reliability of the GaN BJT at 300°C was thus confirmed.Keywords
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