Electron properties in GaAs for the design of MM-wave IMPATTs
- 1 April 1991
- journal article
- research article
- Published by Springer Nature in International Journal of Infrared and Millimeter Waves
- Vol. 12 (4) , 345-354
- https://doi.org/10.1007/bf01009408
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Selective etching technology for 94 GHz GaAs IMPATT diodes on diamond heat sinksSolid-State Electronics, 1989
- Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effectsPhysical Review B, 1988
- The determination of impact ionization coefficients in (100) gallium arsenide using avalanche noise and photocurrent multiplication measurementsIEEE Transactions on Electron Devices, 1985
- High field temperature dependent electron drift velocities in GaAsApplied Physics Letters, 1982
- Band-structure-dependent transport and impact ionization in GaAsPhysical Review B, 1981
- Electron velocity in Si and GaAs at very high electric fieldsApplied Physics Letters, 1980
- Electron drift velocity in n-GaAs at high electric fieldsSolid-State Electronics, 1977
- Measurement of the electron drift velocity in avalanching GaAs diodesIEEE Transactions on Electron Devices, 1976
- Doping profile measurements from avalanche space−charge resistance: A new techniqueJournal of Applied Physics, 1975
- Transport Properties of GaAsPhysical Review B, 1968