A 40ns junction-shorting PROM

1 January 1983

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 172-173
https://doi.org/10.1109/isscc.1983.1156511

Abstract

An 8K×8b junction-shorting PROM using a selective power-switching circuit in dual stage decoders will be detailed. Shallow V-groove isolation and wafer stepper process technologies resulted in a 7.14mm × 5.28mm chip with a 168μ2cell size.

Keywords

PROM
DECODING
INVERTERS
MULTIPLEXING
ALUMINUM
DRIVER CIRCUITS
VOLTAGE
DIODES
TEMPERATURE
CURRENT SUPPLIES