High-resolution electron energy loss studies of Al and Ge chemisorption on silicon

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Abstract
We used high-resolution electron energy loss spectroscopy to study the formation of Al–Si interfaces. In particular, we confirmed that as-grown monolayers of Al on Si (111) 7×7 have metallic character as suggested by photoemission results on the Schottky barrier formation process. This conclusion, however, cannot be generalized to the case of reconstructed overlayers. Preliminary results on Ge overlayers revealed a metallic character of reconstructed Si–Ge 5×5.

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