On the Temperature Dependence of Hole Mobility in Silicon
- 1 January 1970
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 37 (1) , 433-438
- https://doi.org/10.1002/pssb.19700370148
Abstract
The influence of the non‐parabolicity of the valence band on the hole mobility in Si is investigated. The numerical and experimental results can be fitted if for the holes the non‐parabolicity of the energy spectrum as well as their scattering on acoustic and optical phonons are taken into account.Keywords
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