Technology development for GaN/AlGaN HEMT hybrid and MMIC amplifiers on semi-insulating SiC substrates
- 11 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- High power demonstration at 10 GHz with GaN-AlGaN HEMT hybrid amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphireApplied Physics Letters, 2000
- High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substratesIEEE Electron Device Letters, 1999
- Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructuresJournal of Applied Physics, 1999
- Nitride-Based Emitters on SiC SubstratesMaterials Science Forum, 1998