Structural and optical properties of CuInS2 bulk crystals
- 15 May 1994
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 75 (10) , 5361-5366
- https://doi.org/10.1063/1.355739
Abstract
The optical properties of CuInS2 bulk crystals were studied by photoreflectance (PR) and photoluminescence (PL) spectroscopy in comparison with the material structure, verified by energy dispersive x‐ray (EDX) microprobe analysis and x‐ray diffraction. The samples have been produced by the gradient freeze technique under different sulfur pressures. It was shown by EDX that growth‐induced cracking along the ingot is strongly reduced with higher sulfur pressures. The PR spectra at 80 K exhibit two well‐resolved transitions. From a comparison with the reflectivity spectra at 80 K, these transitions are explained by the presence of two Wannier excitons. The fit of the spectra yields a broadening parameter of the lower‐energy transition which increases approximately linearly with increasing Cu/In ratio. Thus, it is deduced that PR is sensitive to small inhomogeneities in the molecularity of the compound. In agreement with the EDX data photoluminescence indicates the material to be Cu rich. However, a continuous change of the significant PL peaks as a function of the Cu/In ratio could not be observed. According to this, PL is not well suitable to determine small inhomogeneities of the molecularity, in contrast to PR.This publication has 17 references indexed in Scilit:
- Phase Relations in the Cu‐In‐S System and Growth of Large CuInS2 Single CrystalsJournal of the Electrochemical Society, 1992
- Photoreflectance of sulfur-annealed copper indium disulfideJournal of Applied Physics, 1990
- Efficient solar energy conversion with CuInS2Nature, 1986
- Study of CuInS2 grown by the traveling-heater method by electrolyte electroreflectanceJournal of Applied Physics, 1986
- A novel method to grow large CuInS2 single crystalsJournal of Crystal Growth, 1984
- Mass spectrometric studies of the Decomposition and the Heat of Formation of CuInS2(s)Zeitschrift für anorganische und allgemeine Chemie, 1983
- Luminescence of CuInS2: I. The broad band emission and its dependence on the defect chemistryJournal of Luminescence, 1982
- Phase relations in the system Cu2S-In2S3Journal of Crystal Growth, 1980
- Electrical Properties, Optical Properties, and Band Structure of CuGaand CuInPhysical Review B, 1971
- Theoretical Considerations Governing the Choice of the Optimum Semiconductor for Photovoltaic Solar Energy ConversionJournal of Applied Physics, 1956