Destabilization of the Si(111)-bonded chain structure upon Cs adsorption
- 15 May 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (14) , 10456-10459
- https://doi.org/10.1103/physrevb.39.10456
Abstract
Contrary to previous knowledge, we have found an ordered surface reconstruction on the cleaved Si(111) surface after room-temperature deposition of one monolayer of Cs. The preparation and characterization of this surface, and the dispersion of the lowest unoccupied surface-state band as measured with angle-resolved inverse photoemission spectroscopy are presented. The surface is observed at the saturation of the work function and found to be semiconducting.
Keywords
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